4. Static information storage and retrieval
  5. Read/write circuit
  6. Including specified plural element logic arrangement

Nirmal Ratnakumar

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EEPROM memory cell with first-dopant-type control gate...

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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EEPROM memory device with cell having NMOS in a P pocket as...

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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Method of programming a selected memory cell

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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Non-volatile static memory cell

Static information storage and retrieval – Read/write circuit – Including specified plural element logic arrangement
Reexamination Certificate

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