4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Thin active physical layer which is
  6. Heterojunction

Motokazu Yamada

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Gallium nitride based III-V group compound semiconductor...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate

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Gallium nitride based III-V group compound semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate

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Gallium nitride based III-V group compound semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate

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Gallium nitride based III-V group compound semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate

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Gallium nitride-based III-V group compound semiconductor

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent

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Profile ID: LFUS-PAI-P-136666

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