Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-02-14
2006-02-14
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S011000, C257S021000, C257S022000, C257S076000, C257S094000, C257S103000, C257S453000, C257S613000, C257S615000, C257S745000, C257S766000, C257S098000, C257S086000, C257S099000
Reexamination Certificate
active
06998690
ABSTRACT:
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
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Bando Kanji
Nakamura Shuji
Senoh Masayuki
Yamada Motokazu
Yamada Takao
Baumeister B. William
Nichia Corporation
Yevsikov Victor V.
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