Gallium nitride based III-V group compound semiconductor...

Details Gallium nitride based III-V group compound semiconductor... Gallium nitride based III-V group compound semiconductor...

2007-04-17

2007-04-17

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21062

Reexamination Certificate

active

11198465

ABSTRACT:
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

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