4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Heterojunction device
  6. With lattice constant mismatch

Ming-Hua Yu

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Epitaxy silicon on insulator (ESOI)

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Manufacture method of metal bottom ARC

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate

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MOS devices with partial stressor channel

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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MOS devices with partial stressor channel

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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SiGe selective growth without a hard mask

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
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Profile ID: LFUS-PAI-P-2179401

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