4. Metal treatment
  5. Stock
  6. Amorphous, i.e., glassy

John Harold Tregilgas

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Intrinsic p-type HgCdTe using CdTe capping layer

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
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Method of producing intrinsic p-type HgCdTe using CdTe capping l

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
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Micromechanical device with reduced load relaxation

Metal treatment – Stock – Amorphous – i.e. – glassy
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Profile ID: LFUS-PAI-P-691223

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