Method of producing intrinsic p-type HgCdTe using CdTe capping l

Details Method of producing intrinsic p-type HgCdTe using CdTe capping l Method of producing intrinsic p-type HgCdTe using CdTe capping l

1993-08-13

2000-02-29

Niebling, John F.

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438102, H01L 2100

Patent

active

060308532

ABSTRACT:
A hybrid focal plane array has Hg.sub.1-x Cd.sub.x Te junction photodiodes formed in a substrate of HgCdTe which is capped by a layer of Te-rich CdTe. Type conversion of a low metal vacancy HgCdTe substrate to p-type is performed by annealing the capped substrate at a temperature sufficient to support interdiffusion between the Te-rich CdTe capping layer and the HgCdTe substrate. Use of the CdTe capping layer with a slight excess Te maintains the surface of the HgCdTe substrate in a Te-rich phase condition.

REFERENCES:
patent: 4927773 (1990-05-01), Jack et al.
patent: 4950615 (1990-08-01), Basol et al.

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