Intrinsic p-type HgCdTe using CdTe capping layer

Details Intrinsic p-type HgCdTe using CdTe capping layer Intrinsic p-type HgCdTe using CdTe capping layer

1999-09-28

2000-09-05

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257188, 257441, H01L 3100, H01L 31072

Patent

active

061147389

ABSTRACT:
A hybrid focal plane array has Hg.sub.1-x Cd.sub.x Te junction photodiodes formed in a substrate of HgCdTe which is capped by a layer of Te-rich CdTe. Type conversion of a low metal vacancy HgCdTe substrate to p-type is performed by annealing the capped substrate at a temperature sufficient to support interdiffusion between the Te-rich CdTe capping layer and the HgCdTe substrate. Use of the CdTe capping layer with a slight excess Te maintains the surface of the HgCdTe substrate in a Te-rich phase condition.

REFERENCES:
patent: 4602189 (1986-07-01), Panicker
patent: 4801990 (1989-01-01), Carpentier et al.
patent: 4927773 (1990-05-01), Jack et al.
patent: 4950615 (1990-08-01), Basol et al.
patent: 5279974 (1994-01-01), Walsh
patent: 5936268 (1999-08-01), Cockrum et al.

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