4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. With a step of measuring, testing, or sensing

Heinz Lendenmann

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Epitaxial semiconductor structures having reduced stacking...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate

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Featuring forming methods to reduce stacking fault...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate

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Featuring forming methods to reduce stacking fault...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate

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Lithographic methods to reduce stacking fault nucleation sites

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate

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Method concerning a junction barrier Schottky diode, such a...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
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