Featuring forming methods to reduce stacking fault...

Details Featuring forming methods to reduce stacking fault... Featuring forming methods to reduce stacking fault...

2008-07-08

2008-07-08

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

C117S095000, C117S097000, C438S105000, C438S931000

Reexamination Certificate

active

07396410

ABSTRACT:
Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. The epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes features therein.

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