Lithographic methods to reduce stacking fault nucleation sites

Details Lithographic methods to reduce stacking fault nucleation sites Lithographic methods to reduce stacking fault nucleation sites

2007-02-06

2007-02-06

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S076000, C257S628000, C438S931000, C438S105000

Reexamination Certificate

active

10929226

ABSTRACT:
Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. The epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes features therein.

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