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Francesco Bonoli

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Process for preparing single crystal silicon having improved...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate

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Single crystal silicon having improved gate oxide integrity

Stock material or miscellaneous articles – Circular sheet or circular blank
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2950584

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