Single crystal silicon having improved gate oxide integrity

Details Single crystal silicon having improved gate oxide integrity Single crystal silicon having improved gate oxide integrity

2006-01-17

2006-01-17

Pyon, Harold (Department: 1772)

Stock material or miscellaneous articles

Circular sheet or circular blank

C428S064400, C117S013000, C117S020000, C117S932000

Reexamination Certificate

active

06986925

ABSTRACT:
A single crystal silicon wafer comprising a front surface, a back surface, a lateral surface joining the front and back surfaces, a central axis perpendicular to the front and back surfaces, and a segment which is axially symmetric about the central axis extending substantially from the front surface to the back surface in which crystal lattice vacancies are the predominant intrinsic point defect, the segment having a radial width of at least about 25% of the radius and containing agglomerated vacancy defects and a residual concentration of crystal lattice vacancies wherein (i) the agglomerated vacancy defects have a radius of less than about 70 nm and (ii) the residual concentration of crystal lattice vacancy intrinsic point defects is less than the threshold concentration at which uncontrolled oxygen precipitation occurs upon subjecting the wafer to an oxygen precipitation heat treatment.

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