Process for preparing single crystal silicon having improved...

Details Process for preparing single crystal silicon having improved... Process for preparing single crystal silicon having improved...

2005-03-24

2008-10-07

Hiteshew, Felisa C (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S013000, C117S019000

Reexamination Certificate

active

07431765

ABSTRACT:
A process for producing a single crystal silicon wafer comprising a front surface, a back surface, a lateral surface joining the front and back surfaces, a central axis perpendicular to the front and back surfaces, and a segment which is axially symmetric about the central axis extending substantially from the front surface to the back surface in which crystal lattice vacancies are the predominant intrinsic point defect, the segment having a radial width of at least about 25% of the radius and containing agglomerated vacancy defects and a residual concentration of crystal lattice vacancies wherein (i) the agglomerated vacancy defects have a radius of less than about 70 nm and (ii) the residual concentration of crystal lattice vacancy intrinsic point defects is less than the threshold concentration at which uncontrolled oxygen precipitation occurs upon subjecting the wafer to an oxygen precipitation heat treatment.

REFERENCES:
patent: 5502010 (1996-03-01), Nadahara et al.
patent: 5919302 (1999-07-01), Falster et al.
patent: 5954873 (1999-09-01), Hourai et al.
patent: 5994761 (1999-11-01), Falster et al.
patent: 6162708 (2000-12-01), Tamatsuka et al.
patent: 6180220 (2001-01-01), Falster et al.
patent: 6191010 (2001-02-01), Falster
patent: 6254672 (2001-07-01), Falster et al.
patent: 6287380 (2001-09-01), Falster et al.
patent: 6299982 (2001-10-01), Tamatsuka et al.
patent: 6336968 (2002-01-01), Falster
patent: 6485807 (2002-11-01), Park
patent: 6835245 (2004-12-01), Ono et al.
patent: 6846539 (2005-01-01), Kim et al.
patent: 6986925 (2006-01-01), Falster et al.
patent: 7141113 (2006-11-01), Nakamura et al.
patent: 7217320 (2007-05-01), Kim et al.
patent: WO 98/45507 (1998-10-01), None
R. Falster “The Phenomenology of Dielectric Breakdown in Thin Silicon Dioxide Films: Al Cathodes and p-type Si Anodes” J. Appl. Phys., vol. 66, No. 7 (1989) pp. 3355-3370.
R. Falster et al. “On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing” Phys. Stat. Sol. (b), vol. 222, No. 1 (2000) pp. 219-244.
T. Sinno et al. “Point Defect Dynamics and the Oxidation-Induced Stacking-Fault Ring in Czochralski-Grown Silicon Crystals” J. Electrochem. Soc., vol. 145, No. 1 (1998) pp. 302-318.
A. Virzi “Computer Modelling of Heat Transfer in Czochralski Silicon Crystal Growth” J. of Crystal Growth, vol. 112, No. 4 (1991) pp. 699-722.
V. Voronkov et al., “Grown-in Microdefects, Residual Vacancies and Oxygen Precipitation Bands in Czochralski Silicon” J. of Crystal Growth, vol. 204 (1999) pp. 462-474.
V. Voronkov et al. “Vacancy and Self-Interstitial Concentration Incorporated into Growing Silicon Crystals” J. of Applied Physics, vol. 86, No. 11 (1999) pp. 2975-2982.
V. Voronkov et al. “Vacancy-type Microdefect Formation in Czochralski Silicon” J. of Crystal Growth, vol. 194 (1998) pp. 76-88.
Partial International Search for analogous PCT application Serial No. PCT/US02/01127 dated Sep. 9, 2002.

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