4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Point contact device

Encarnacion Antonia Garcia Villora

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β-Ga 2 O 3 single crystal growing method, thin-film...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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β-Ga 2 O 3 single crystal growing method, thin-film...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Light emitting element and method of making same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate

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Light emitting element and method of making same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate

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Light emitting element and method of making same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2230926

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