Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2008-01-15
2008-01-15
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S094000
Reexamination Certificate
active
11211860
ABSTRACT:
A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1−X−Y))2O3where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.
REFERENCES:
patent: 6358770 (2002-03-01), Itoh et al.
patent: 6977397 (2005-12-01), Ichinose et al.
patent: 2003/0024475 (2003-02-01), Anderson
patent: 2003/0107098 (2003-06-01), Ota et al.
patent: 2004/0104392 (2004-06-01), Ishizaki
patent: 2004/0262684 (2004-12-01), Fragapane et al.
patent: 1 306 858 (2003-05-01), None
patent: WO 2004/074556 (2004-09-01), None
Encarnacion Garcia Villora, et al., “Cathodoluminescence of undoped β-Ga2O3 single crystals”, Solid State Communications, 120 (Elsevier Science Ltd.), pp. 455-458 (2001).
Office Action of Japan Patent Office in Application No. JP 2003-137912, dated Apr. 13, 2005 with English language translation.
English language translation of Japanese Publication No. JP 2003/069076, published Mar. 7, 2003.
Abstract of Japanese Publication No. JP 2002/134786 A2, dated May 10, 2002.
Abstract of Japanese Publication No. JP 2003/349336, A2, dated Dec. 15, 2000.
Abstract of Japanese Publication No. JP 2004/269338, published Sep. 30, 2004.
Abstract of Japanese Publication No. 07/082088, published Mar. 28, 1995.
Abstract of Japanese Publication No. JP 2002/093243, published Mar. 29, 2002.
Office Action of Japan Patent Office in Application No. JP 2003-137912, dated Apr. 13, 2005.
Aoki Kazuo
Garcia Villora Encarnacion Antonia
Ichinose Noboru
Kaneko Yukio
Shimamura Kiyoshi
Koha Co., Inc.
Pham Long
Scully , Scott, Murphy & Presser, P.C.
LandOfFree
Light emitting element and method of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting element and method of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting element and method of making same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3959461