Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2008-01-15
2008-01-15
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S094000
Reexamination Certificate
active
07319249
ABSTRACT:
A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1−X−Y))2O3where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.
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Aoki Kazuo
Garcia Villora Encarnacion Antonia
Ichinose Noboru
Kaneko Yukio
Shimamura Kiyoshi
Koha Co., Inc.
Pham Long
Scully , Scott, Murphy & Presser, P.C.
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