Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2008-07-01
2008-07-01
Kunemund, Robert (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S095000, C117S945000, C117S946000, C117S947000, C257S094000, C257S103000, C257S079000
Reexamination Certificate
active
10546484
ABSTRACT:
A method for growing a β-Ga2O3single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a GazO3light-emitting device capable of emitting a light in the ultraviolet region, and its manufacturing method are disclosed. In an infrared-heating single crystal manufacturing system, a seed crystal and polycrystalline material are rotated in mutually opposite directions and heated, and a β-Ga2O3single crystal is grown in one direction selected from among the a-axis <100> direction, the b-axis <010> direction, and the c-axis <001> direction. A thin film of a β-Ga2O3single crystal is formed by PLD. A laser beam is applied to a target to excite atoms constituting the target Ga atoms are released from the target by thermal and photochemical actions. The free Ga atoms are bonded to radicals in the atmosphere in the chamber. Thus, a thin film of a β-Ga2O3single crystal is grown on a substrate of a β-Ga2O3single crystal A light-emitting device comprises an n-type substrate produced by doping a β-Ga2O3single crystal with an n-type dopant and a p-type layer produced by doping the β-Ga2O3single crystal with a p-type dopant and junctioned to the top of the n-type substrate. The light-emitting device emits a light from the junction portion.
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Aoki Kazuo
Garcia Villora Encarnacion Antonia
Ichinose Noboru
Shimamura Kiyoshi
Kunemund Robert
Rao G. Nagesh
Waseda University
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