Atomic layer deposition of metallic contacts, gates and...

Details Atomic layer deposition of metallic contacts, gates and... Atomic layer deposition of metallic contacts, gates and...

2005-09-13

2005-09-13

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S513000, C438S538000, C438S565000, C438S569000, C438S655000, C438S656000, C438S664000, C438S682000, C438S683000, C438S685000, C438S785000

Reexamination Certificate

active

06943097

ABSTRACT:
The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic silicon nitride film. The methods of the present invention are capable of forming metallic films having a thickness of a monolayer or less on the surface of a substrate. The metallic films provided in the present invention can be used for contact metallization, metal gates or as a diffusion barrier.

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