Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-08-16
2011-08-16
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S513000, C438S538000, C438S565000, C438S569000, C438S655000, C438S682000, C438S683000, C438S685000
Reexamination Certificate
active
07998842
ABSTRACT:
The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic silicon nitride film. The methods of the present invention are capable of forming metallic films having a thickness of a monolayer or less on the surface of a substrate. The metallic films provided in the present invention can be used for contact metallization, metal gates or as a diffusion barrier.
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Cabral, Jr. Cyril
Kim Hyung-jun
Rossnagel Stephen M.
Garcia Joannie A
International Business Machines - Corporation
Percello, Esq. Louis J.
Richards N Drew
Scully , Scott, Murphy & Presser, P.C.
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