Manufacturing method of target for sputtering

Powder metallurgy processes – Powder metallurgy processes with heating or sintering – Metal and nonmetal in final product

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419 19, 419 33, 419 39, 419 45, B22F 100

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055903851

ABSTRACT:
A manufacturing method of a target for sputtering comprises the steps of: compressing first and second oxide powders with high permeability to form first and second compressed materials, respectively; sintering the first and the second compressed materials to form a sintered body made of a third oxide crystal; pulverizing the sintered body made of the third oxide crystal to form a third oxide powder; mixing the third oxide powder and titanium powder and compressing the mixed powder to form a third compressed material; and sintering the third compressed material in a vacuum condition to form an oxide target. This manufacturing method produces a target which can stably form oxide thin film with high permeability at high voltage for a long time and can be applied to a direct current sputtering process.

REFERENCES:
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patent: 4750932 (1988-06-01), Parent et al.
patent: 4915738 (1990-04-01), Morimoto et al.
patent: 5098649 (1992-03-01), Matsumoto et al.
patent: 5338721 (1994-08-01), Yamamoto et al.
patent: 5447801 (1995-09-01), Masuda et al.

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