Metal treatment
Barrier layer stock material, p-n type
With contiguous layers of different semiconductive material
Inventor
active
Fabrication of nitride semiconductor light-emitting device
Group III nitride semiconductor optical device
Growth of GaN layers on quartz substrates
Method for forming group-III nitride semiconductor layer and...
Method of growing nitride crystal of group III element
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Profile ID: LFUS-PAI-P-576543