Method for forming group-III nitride semiconductor layer and...

Details Method for forming group-III nitride semiconductor layer and... Method for forming group-III nitride semiconductor layer and...

2005-01-11

2005-01-11

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

Reexamination Certificate

active

06841410

ABSTRACT:
A method of forming a partially etched nitride-based compound semiconductor crystal layer includes the following steps. A non-crystal layer of a nitride-based compound semiconductor is formed. At least a part of the non-crystal layer is then etched to form a partially etched non-crystal layer before the partially etched non-crystal layer is crystallized to form a partially etched nitride-based compound semiconductor crystal layer.

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Y. Arakawa et al., “Physics and Simulation of Optocelectronic Devices 1X”,Proceedings of SPIE, vol. 4283, (2001), pp. 58-66.

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