4. Static information storage and retrieval
  5. Systems using particular element
  6. Magnetoresistive

Anthonie Meindert Herman Ditewig

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Current re-routing scheme for serial-programmed MRAM

Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate

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Device and method to read a 2-transistor flash memory cell

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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Magnetoresistive memory cell array and MRAM memory...

Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate

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Method and circuit arrangement for memory error processing

Error detection/correction and fault detection/recovery – Data processing system error or fault handling – Reliability and availability
Reexamination Certificate

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MRAM-cell and array-architecture with maximum read-out...

Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2271765

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