MRAM-cell and array-architecture with maximum read-out...

Details MRAM-cell and array-architecture with maximum read-out... MRAM-cell and array-architecture with maximum read-out...

2007-04-17

2007-04-17

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

10515475

ABSTRACT:
An MRAM memory is proposed which gives a maximum read-out signal. This is advantageous for high-speed sensing of the MRAM bits. In an MRAM memory with magnetoresistive memory cells linked together to form logically organized rows and columns, It is obtained by, at least during writing, connecting write bitlines of two adjacent rows or columns with each other, so as to write inverse data values in two adjacent memory cells. In this way, a return path for the writing current is provided in a small loop, which enhances EMC behavior.

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patent: 1 109 170 (2001-06-01), None

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