Method of etching a lateral trench under an extrinsic base...

Details Method of etching a lateral trench under an extrinsic base... Method of etching a lateral trench under an extrinsic base...

2005-11-15

2005-11-15

Kang, Donghee (Department: 2811)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S319000, C438S353000, C438S355000, C438S359000, C438S739000, C257S517000, C257S521000, C257S524000

Reexamination Certificate

active

06964907

ABSTRACT:
In a BJT, the extrinsic base to collector capacitance is reduced by forming a lateral trench between the extrinsic base region and collector. This is typically done by using an anisotropic wet etch process in a <110> direction of a <100> orientation wafer.

REFERENCES:
patent: 4196440 (1980-04-01), Anantha et al.
patent: 4685198 (1987-08-01), Kawakita et al.

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