Semiconductor device and method for producing the same

Details Semiconductor device and method for producing the same Semiconductor device and method for producing the same

1998-03-25

2000-12-26

Pham, Long

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438229, 438275, 438276, H01L 218238

Patent

active

061658251

ABSTRACT:
LOCOS layers for defining NMOSFET and PMOSFET forming regions Rn and Rp are formed, and then a protective oxide layer is formed. A first resist layer, opened above the region Rn, is then formed on the protective oxide layer. By using the first resist layer as a mask, ion implantation is performed twice to form a threshold control layer and a P- layer functioning as a punch-through stopper or the like. By using the first resist layer as a mask, the substrate is etched to remove a portion of the protective oxide layer. Then, the first resist layer is removed. These processes are also performed on the region Rp. Then, a gate oxide layer is formed. Thus, it is possible to prevent a foreign impurity, introduced during the ion implantation, from diffusing the surrounding regions when the resist layers are removed. As a result, the properties of the gate oxide layer can be improved.

REFERENCES:
patent: 5283200 (1994-02-01), Okamoto
patent: 5527722 (1996-06-01), Hutter et al.
patent: 5824560 (1998-10-01), Van Der Wel et al.

Affiliated with

Also associated with

Rating

Semiconductor device and method for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-993891