Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-12-09
2000-04-25
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438597, 438626, 438631, 438618, 438645, H01L 214763
Patent
active
060543809
ABSTRACT:
A method and apparatus for protecting a metal interconnect from corrosion due to contact with a low k dielectric material in a multilevel metallization and interconnect structure. To facilitate such protection, a barrier material, in the form of a sidewall spacer, is deposited between the dielectric material and the metal line.
REFERENCES:
patent: 5236870 (1993-08-01), Sakata et al.
patent: 5930655 (1999-07-01), Cooney, III et al.
Applied Materials Inc.
Niebling John F.
Simkovic Viktor
LandOfFree
Method and apparatus for integrating low dielectric constant mat does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for integrating low dielectric constant mat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for integrating low dielectric constant mat will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-992941