Method of manufacturing a semiconductor device containing CMOS e

Details Method of manufacturing a semiconductor device containing CMOS e Method of manufacturing a semiconductor device containing CMOS e

1998-08-27

2000-12-05

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438592, H01L 218238

Patent

active

06156592&

ABSTRACT:
In a CMOS-element-containing semiconductor device, the CMOS element comprises: a silicon substrate; an n-channel MOS element formed on the silicon substrate and including an n-type source/drain region, a gate oxide film and a gate electrode; a p-channel MOS element formed on the silicon substrate and including a p-type source/drain region, a gate oxide film and a gate electrode; and a gate wiring layer electrically interconnecting the gate electrode of the n-channel MOS element and the gate electrode of the p-channel MOS element with one another. The gate electrodes and/or the gate wiring layer include at least in part a metal silicide layer. The gate electrodes and the gate wiring layer contain at arbitrary region impurities consisting of a III group dopant and/or a V group dopant in a concentration of at most 3.times.10.sup.20 atoms cm.sup.-3.

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