Photogate sensor with improved responsivity

Details Photogate sensor with improved responsivity Photogate sensor with improved responsivity

1997-11-21

1999-06-01

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257233, 257290, 257291, H01L 31062, H01L 31113

Patent

active

059090413

ABSTRACT:
A depleted-gate photosensor, or photogate, structure includes a polysilicon layer disposed over a silicon substrate. The polysilicon layer occupies only a portion of each exposure area of the substrate, and is preferably in the form of a ring around the exposure area. By having a portion of the exposure area not covered by the polysilicon, the blue-light-attenuation effects of a polysilicon layer are reduced.

REFERENCES:
patent: 5187380 (1993-02-01), Michon et al.
patent: 5471515 (1995-11-01), Fossum et al.
patent: 5488251 (1996-01-01), Mizutani et al.
patent: 5576763 (1996-11-01), Ackland et al.
patent: 5587596 (1996-12-01), Chi et al.
patent: 5625210 (1997-04-01), Lee et al.
patent: 5631704 (1997-05-01), Dickinson et al.

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