Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-10-02
2000-09-12
Pham, Long
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438174, 438217, 438276, 438289, 438526, 438529, H01L 21336
Patent
active
061177393
ABSTRACT:
A semiconductor device can be formed with active regions disposed in a substrate adjacent to a gate electrode and a doped region, of the same conductivity type as the active regions, embedded beneath the channel region defined by the active regions. In one embodiment, a patterned masking layer having at least one opening is formed over the substrate. A dopant material is implanted into the substrate using the masking layer to form active regions adjacent to the opening and an embedded doped region that is between and spaced apart from the active regions and is deeper in the substrate then the active regions. In addition or alternatively, spacer structures can be formed on the gate electrode by forming a conformal dielectric layer along a bottom surface and at least one sidewall of the opening and forming a gate electrode in the opening over the dielectric layer. The masking layer is then removed to leave the dielectric layer between the gate electrode and the substrate and as spacer structures on the sidewalls of the gate electrode.
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Gardner Mark I.
Hause Fred N.
May Charles E.
Advanced Micro Devices , Inc.
Pham Long
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