Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-11-26
2000-09-12
Fahmy, Wael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438289, 438381, 438449, 438450, H01L 218244
Patent
active
061177210
ABSTRACT:
A semiconductor processing method of forming a static random access memory cell having an n-channel access transistor includes, providing a bulk semiconductor substrate; patterning the substrate for definition of field oxide regions and active area regions for the n-channel access transistor; subjecting the patterned substrate to oxidizing conditions to form a pair of field oxide regions and an intervening n-channel access transistor active area therebetween, the field oxide regions having respective bird's beak regions extending into the n-channel access transistor active area, the n-channel access transistor active area defining a central region away from the bird's beak regions; and conducting a p-type V.sub.T ion implant into the n-channel active area using the field oxide bird's beak regions as an implant mask to concentrate the V.sub.T implant in the central region of the active area. A semiconductor device includes, a substrate; an n-type transistor on the substrate; and field oxide surrounding the transistor, the transistor having an active area including a central region and a peripheral region with respect to the field oxide, the transistor having a p-type V.sub.T ion implant which is more concentrated in the central region than in the peripheral region.
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Dennison Charles H.
Marr Ken
Fahmy Wael
Micro)n Technology, Inc.
Thomas Toniae M.
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