Coating apparatus – Gas or vapor deposition – With treating means
Patent
1996-07-09
2000-12-05
Dang, Thi
Coating apparatus
Gas or vapor deposition
With treating means
118725, 156345, L23C 1600
Patent
active
061551988
ABSTRACT:
The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is formed on the wafer, while the wafer is in the processing chamber. Next, the layer of material is oxidized, while the wafer is in the processing chamber. A semiconductor wafer processing chamber for carrying out such a construction in-situ may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.
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Chang Mei
Danek Michael
DuBois Dale
Englhardt Eric
Kao Yeh-Jen
Applied Materials Inc.
Dang Thi
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