Carbonized antireflective coating produced by spin-on polymer ma

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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430311, 430512, 430514, 430942, 430945, 430950, 427554, G03C 500

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061176184

ABSTRACT:
In one embodiment, the present invention relates to a method of making a carbonized antireflection coating involving the steps of depositing a polymer layer on a semiconductor substrate; and carbonizing at least a portion of the polymer layer in an inert atmosphere to provide the carbonized antireflection coating. In another embodiment, the present invention relates to a method of improving critical dimensional control during lithography, involving the steps of providing a semiconductor substrate; depositing a polymer layer on the semiconductor substrate; carbonizing at least a portion of the polymer layer in an inert atmosphere to provide a carbonized antireflection coating; depositing a photoresist over the carbonized antireflection coating; and patterning the photoresist.

REFERENCES:
patent: 4286250 (1981-08-01), Sacchetti
patent: 4584456 (1986-04-01), Oodaira et al.
patent: 5137751 (1992-08-01), Burgess et al.
patent: 5437961 (1995-08-01), Yano et al.
IBM Technical Disclosure Bulletin, "Carbonized Resist As Directly-Patternable Mask Absorber", Mar. 1988, vol. 30, issue 10, p 402-406, NN8803402.

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