Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Patent
1997-03-07
2000-02-01
Booth, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
438217, 438275, 438276, 438286, 438291, H01L 21337
Patent
active
060202270
ABSTRACT:
A structure containing multiple field-effect transistors (60 and 150) is fabricated from a semiconductor body having material (82) of a specified conductivity type. Semiconductor dopant of the specified conductivity type is introduced, typically simultaneously, (a) into part of a first channel zone of the material of the specified conductivity type to define a threshold channel portion (66) more heavily doped than a main channel portion (65) and (b) into substantially all of a second channel zone of the material of the specified conductivity type. First and second gate electrodes (69 and 141) are provided respectively above, and insulatingly spaced apart from, the first and second channel zones. Semiconductor dopant of the opposit conductivity type is introduced into the semiconductor body to define (a) a pair of first source/drain zones (63/64 and 75/76) laterally separated by the first channel zone and (b) a pair of second source/drain zones (133/134 and 135/136) laterally separated by the second channel zone.
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Booth Richard
Hack Jonathan
Meetin Ronald J.
National Semiconductor Corporation
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