Process for producing semiconductor device

Details Process for producing semiconductor device Process for producing semiconductor device

1981-11-13

1983-08-30

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG66, C30B 2520

Patent

active

044015062

ABSTRACT:
A process for producing a semiconductor device having high quality and self-gettering action. First, oxygen ion is implanted to the surface of a silicon monocrystalline substrate. Then, it is heat treated to precipitate the oxygen ion and to thereby produce micro defects in the layer to which oxygen ion is implanted. Subsequently, an epitaxial layer is grown on the micro defect layer. The two steps after the oxygen ion implantation may be conducted in reverse order to one another.

REFERENCES:
patent: 3316121 (1967-04-01), Lombos et al.
patent: 4203799 (1980-05-01), Sugawara et al.
The Identification, Annihilation, and Suppression of Nucleation Sites Responsible for Silicon Epitaxial Stacking Faults, Roxgonyi et al., Dec. 1978, J. Electrochem Soc.: Solid-State Science and Technology 1910.
High Oxygen Czochralski Silicon Crystal Growth Relationship to Epitaxial Stacking Faults, L. E. Katz et al., Jul. 1978, J. Electrochem Soc.: Solid-State Science and Technology 1151.

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