Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-11-01
1999-07-27
Brown, Peter Toby
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438255, 438397, 438398, 438960, 438964, H01L 218242
Patent
active
059306262
ABSTRACT:
The method of fabricating a capacitor of a memory cell is disclosed including the steps of forming a transistor on a semiconductor substrate; sequentially forming an etch stop layer, an insulating layer and a first conductive layer on the semiconductor substrate and the transistor; converting a portion of the first conductive layer into a first porous layer through anodization; patterning a predetermined portion of the first porous layer to form a storage node contact; forming a second conductive layer on the semiconductor substrate and the first porous layer; converting a portion of the second conductive layer into a second porous layer through anodization; patterning a portion of the second porous layer and forming a storage node electrode pattern through an etching process; forming a dielectric layer on an overall surface of the storage node electrode pattern; and forming a third conductive layer on an overall surface of the dielectric layer.
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Brown Peter Toby
LG Semicon Co. Ltd.
Thomas Toniae M.
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