Wire bonding method, wire bonding apparatus and semiconductor de

Details Wire bonding method, wire bonding apparatus and semiconductor de Wire bonding method, wire bonding apparatus and semiconductor de

1997-04-16

1998-11-17

Ostrowski, David

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Wire contact, lead, or bond

257676, 257786, 228904, H01L 2348, H01L 2352

Patent

active

058380710

ABSTRACT:
A wire bonding method for joining a metal wire with a bonding pad disposed on a semiconductor element by using a load and supersonic wave vibration, comprising: during interval of time from contact of the metal wire with the bonding pad to application of the supersonic wave vibration, continuously applying a first bonding load and a second bonding load which is lower than the first bonding load; and after application of the supersonic wave vibration, continuously applying a third bonding load of a size of about 50% of the load of the second bonding load and a fourth bonding load which is lower than the first bonding load and higher than the third bonding load. The reliability of the fine wire bonding joint is improved remarkably, whereby a high quality semiconductor device cna be produced at a low cost.

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