Method of manufacturing shallow trench source EPROM cell

Details Method of manufacturing shallow trench source EPROM cell Method of manufacturing shallow trench source EPROM cell

1997-01-16

1998-09-15

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438524, H01L 218247

Patent

active

058077782

ABSTRACT:
The inventive cell comprises a source area which is at a lower plane than the drain region, and a program charge is transferred to the floating gate through the source-side injector. Instead of using a self-aligned high-energy n-type dopant implant at the source side to form the source side injector as used with previous cells, which can be difficult to control, etching the substrate before impurity doping allows for the controllable formation of a sharp point of doped silicon, and allows for improved programming at a lower voltage.

REFERENCES:
patent: 4763177 (1988-08-01), Patterson
patent: 4997777 (1991-03-01), Boivin
patent: 5019527 (1991-05-01), Ohshima et al.
patent: 5049515 (1991-09-01), Tzeng
patent: 5233210 (1993-08-01), Kodama
patent: 5278438 (1994-01-01), Kim et al.
"Buried Source-Side Injection (BSSI) for Flash EPROM Programming", Cetin Kaya et al., IEEE, 1992, pp. 465-467.

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