Manufacturing method for integrated circuit dielectric layer

Details Manufacturing method for integrated circuit dielectric layer Manufacturing method for integrated circuit dielectric layer

1998-04-14

1999-12-14

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438287, 438591, 438769, 438770, 438775, H01L 21331, H01L 213205, H01L 214763, H01L 2131, H01L 21469

Patent

active

060016949

ABSTRACT:
A method for adjusting the amount of doped nitride ions in a dielectric layer so that the nitride ions form bonds with silicon to increase the quality of an oxide layer. The method comprises the step of providing a silicon substrate. Next, a rapid thermal oxidation or furnace oxidation method is used to form an oxide layer over the silicon substrate. Gaseous mixtures having different ratios of nitrogen monoxide, nitrous oxide or ammonia to oxygen are concocted and then allowed to react at different reacting temperatures for controlling the nitride concentration level in the oxide layer. The nitride-doped oxide layer not only can stop the penetration of boron ions, but can also provide a stabilizing effect on the oxide layer/silicon substrate interface without degradation of electrical property, thereby improving the quality of a transistor.

REFERENCES:
patent: 5661072 (1997-08-01), Jeng

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