Semiconductor integrated circuit apparatus and associated fabric

Details Semiconductor integrated circuit apparatus and associated fabric Semiconductor integrated circuit apparatus and associated fabric

1998-01-20

1999-12-14

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438234, 148DIG9, H01L 218238

Patent

active

060016760

ABSTRACT:
Formed on a p-type semiconductor substrate are bipolar transistors and CMOS transistors. A bipolar transistor has a base extraction electrode a side-surface of which is covered with an oxide layer, a silicon nitride layer, and a polysilicon layer. A CMOS transistor has a gate electrode a side-surface of which is covered with an oxide layer, a silicon nitride layer, and a side-wall layer. The silicon nitride layer on the side-surface of the base extraction electrode is formed by the same fabrication step that the silicon nitride layer on the side-surface of the gate electrode is formed.

REFERENCES:
patent: 5098638 (1992-03-01), Sawada
Shigeki Sawada et al., "Base-Emitter Voltage Mismatch in a pair of Self-Aligned Bipolar Transistors", Proc. of IEEE 1990 Bipolar Circuits and Technology Meeting 8.3, Sep. 17-18, 1990, pp. 184-187.

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