Drying and gas or vapor contact with solids – Process – Gas or vapor pressure is subatmospheric
Patent
1996-12-04
1999-01-05
Bennett, Henry A.
Drying and gas or vapor contact with solids
Process
Gas or vapor pressure is subatmospheric
34 75, 34 76, 34 92, 34418, F26B 504
Patent
active
058550771
ABSTRACT:
An apparatus for drying semiconductor wafers using IPA (Isopropyl Alcohol) vapor includes a first chamber for producing the IPA vapor, and a second chamber connected to the first chamber through an IPA supply line, for receiving the IPA vapor and drying semiconductor wafers using the IPA vapor. With the drying apparatus, the first and second chambers are separated from each other, which allows the process steps of producing the IPA vapor and the drying the wafers to be separately performed. The drying apparatus thus prevents particles from being generated in the second chamber during the drying process. The wafers can be dried without a variation in temperature in the second chamber. The IPA vapor is exhausted from the second chamber by introducing nitrogen into the second chamber. As a result, the IPA vapor in the second chamber is not liquified and thereby leaves no substance to adhere to a contact portion between a wafer carrier and each wafer.
REFERENCES:
patent: 5249371 (1993-10-01), Saito et al.
patent: 5315766 (1994-05-01), Roberson, Jr. et al.
patent: 5351419 (1994-10-01), Franka et al.
Ko Yong-sun
Nam Chang-Hyun
Bennett Henry A.
Samsung Electronics Co,. Ltd.
Wilson Pamela A.
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