High performance MOSFET device with raised source and drain

Details High performance MOSFET device with raised source and drain High performance MOSFET device with raised source and drain

1998-02-17

1999-12-07

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257332, 257333, 257408, H01L 2978, H01L 2950

Patent

active

059988355

ABSTRACT:
A MOSFET device and a method of manufacturing the device. The device has a trench formed in a silicon substrate. The channel of the device is at the bottom of the trench. Diffusion layers are formed adjacent to opposite sides of the trench. Each diffusion layer is connected to the edge of the device channel by extending the diffusion layer along the side wall of the trench and under a portion of the trench.

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