Method for creating a conductive connection between at least two

Details Method for creating a conductive connection between at least two Method for creating a conductive connection between at least two

1998-04-06

1999-12-07

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438246, 438247, 438249, 438386, 438389, 438392, 438558, 438618, H01L 218242, H01L 2122, H01L 214763

Patent

active

059982543

ABSTRACT:
The method sequence results in a conductive connection between two zones of a first conductivity type. In particular, one of the zones is a source/drain zone of a transistor. Instead of the conventional additional nitride layer, the connection is produced by implanting directly into the third insulation layer, which is present anyway, and by utilizing the fact that the third insulation layer forms the lateral spacers on the gatestack disposed on the region of the second conductivity type.

REFERENCES:
patent: 5185294 (1993-02-01), Lam et al.
patent: 5545581 (1996-08-01), Armacost

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