Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Patent
1997-05-07
1999-03-16
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
438200, 438526, H01L 218234
Patent
active
058829679
ABSTRACT:
According to the present invention, an improved method for buried diode formation in CMOS processing is disclosed. Using a hybrid photoresist process, a self-aligning Zener diode is created using a two-step photolithography mask process. Since the process disclosed in the invention uses only the p-well and the n-well masks to create the Zener diode, photolithography alignment problems are reduced and Zener diodes can be create at the sub-micron scale.
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Brown Jeffrey S.
Holmes Steven J.
Leidy Robert K.
Voldman Steven H.
International Business Machines - Corporation
Nguyen Tuan H.
Shkurko Eugene I.
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