Semiconductor device with selectively patterned connection pad l

Details Semiconductor device with selectively patterned connection pad l Semiconductor device with selectively patterned connection pad l

1996-11-12

1998-10-06

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257383, 257758, 438199, H01L 2976, H01L 2994, H01L 3106, H01L 2348

Patent

active

058180915

ABSTRACT:
A semiconductor device includes a connection pad layer for securing a contact margin which is formed on a first conductivity-type area whereas electrodes are connected directly through openings on a second conductivity-type area without the connection pad layer. A device fabricated according to this structure yields improved punch-through and junction depth characteristics.

REFERENCES:
patent: 5237187 (1993-08-01), Suwanai et al.

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