Semiconductor device with hydrogen ion intercepting layer

Details Semiconductor device with hydrogen ion intercepting layer Semiconductor device with hydrogen ion intercepting layer

1992-10-14

1994-07-05

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257359, 257381, 257751, 257756, H01L 2972

Patent

active

053272242

ABSTRACT:
A thin first insulating oxide film is formed on a semiconductor substrate. A thick second insulating oxide film is formed on a semiconductor substrate. A first polysilicon resistance film is formed on the first insulating oxide film. A second polysilicon resistance film is formed on the second insulating oxide film. An insulating protection film, which contains a large amount of hydrogen ion and covers the first polysilicon resistance film, second polysilicon resistance film, first electrode and second electrode, is formed on the semiconductor substrate. A hydrogen ion intercepting film, which prevents passage of hydrogen ion, is interposed between the first insulating oxide film and the first polysilicon resistance film and between the second insulating oxide film and second polysilicon resistance film.

REFERENCES:
patent: 4212684 (1980-07-01), Brower
patent: 4370798 (1983-02-01), Lien et al.
patent: 4903096 (1990-02-01), Masuoka et al.
patent: 4931845 (1990-06-01), Ema
patent: 5047826 (1991-09-01), Keller et al.
patent: 5135882 (1992-08-01), Karniewicz
patent: 5182627 (1993-01-01), Chen et al.
patent: 5214497 (1993-05-01), Nanba et al.
"Resistor Fabrication Process Using A Multiple Sheet Resistance Structure", by G. R. Goth et al. IBM Technical Disclosure Bulletin, vol. 22, No. 12, May 1980, pp. 5310-5311.
"On the Semi-Insulating Polycrystalline Silicon Resistor", by Ming-Kwang Lee et al., Solid-State Electronics, vol. 27, No. 11, 1984, pp. 995-1001.

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