Coating apparatus – Gas or vapor deposition – With treating means
Patent
1994-06-30
1996-12-03
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
With treating means
118723MP, 156345, 31511151, C23C 1600
Patent
active
055803857
ABSTRACT:
A plasma processing chamber 10 having an inductively coupled plasma (ICP) source 12 mounted therein. The ICP source 12 comprises an antenna 14 encapsulated in epoxy 16 and surrounded by housing 18. The antenna 14 and epoxy 16 are hermetically sealed from plasma formation region 30. The antenna 14 is powered by at least one RF power supply 40 through at least one RF matching network 42. Dielectric capping plate 28 separates ICP source 12 from the plasma formation region 30 and may have a plurality of holes therein to provide a uniform showerhead distribution of process gases.
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Davis Cecil J.
Matthews Robert T.
Paranjpe Ajit P.
Brady III Wade James
Breneman R. Bruce
Donaldson Richard L.
Garner Jacqueline J.
Lund Jeffrie R.
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