Method of forming a field effect transistor

Details Method of forming a field effect transistor Method of forming a field effect transistor

1995-10-18

1997-06-10

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438305, 438595, H01L 218232, H01L 2184

Patent

active

056375140

ABSTRACT:
A method of reducing diffusion of impurity dopants within a semiconductive material beneath a field effect transistor gate in a process of forming a field effect transistor includes, a) providing a bulk monocrystalline silicon substrate; b) providing a gate oxide layer over the silicon substrate; c) providing a patterned gate over the gate oxide layer, the gate having sidewalls; d) providing a pair of diffusion regions within the silicon substrate adjacent the gate sidewalls; and e) subjecting the wafer to an oxidizing atmosphere at a pressure of from about 5 atmospheres to about 30 atmospheres and at a temperature of from about 650.degree. C. to about 750.degree. C. for a period of time from about 5 minutes to about 30 minutes effective, i) to oxidize the gate sidewalls, ii) to oxidize the semiconductive material substrate adjacent the gate sidewalls, and iii) to thicken the gate oxide layer adjacent the gate sidewalls.

REFERENCES:
patent: 4599118 (1986-07-01), Han et al.
patent: 5322807 (1994-06-01), Chen et al.
patent: 5552329 (1996-09-01), Kim et al.
Wolf, "Silicon Processing for the VLSI Era, vol. 2: Process Integration", pp. 66-71 1990 month unknown.
Wolf et al., "Silicon Processing for the VLSI Era, vol. 1: Process Technology", pp. 216-218 1986 month unknown.

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