Method of fabricating semiconductor device with a fuse portion

Details Method of fabricating semiconductor device with a fuse portion Method of fabricating semiconductor device with a fuse portion

1997-08-11

1999-10-26

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438132, H01L 2182

Patent

active

059727560

ABSTRACT:
In a method of fabricating a semiconductor device, an interlayer insulating film is selectively etched to remove a level difference at an area of the interlayer insulating film on a cell plate on cylindrical capacitors and simultaneously form a concave portion on a fuse portion. Since the etching is ended to a degree that the cell plate is not exposed, the concave portion can be formed on the fuse portion not exposed. This does not add a step of forming a protection film on the fuse portion.

REFERENCES:
patent: 4455194 (1984-06-01), Yabu et al.
patent: 4536949 (1985-08-01), Takayama et al.
patent: 4628590 (1986-12-01), Udo et al.
patent: 4853758 (1989-08-01), Fischer
patent: 5279984 (1994-01-01), Kinoshita et al.
patent: 5296402 (1994-03-01), Ryou
patent: 5324681 (1994-06-01), Lowrey et al.

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